Model No: DMP2045U-7
Diodes Incorporated DMP2045U-7
Manufacturer: Diodes Incorporated
SEMICON NO.: DMP2045U-7
Package: SOT-23-3
Stock: In stock
Description: P-Channel 20 V 4.3A 800mW
SEMICON NO.: DMP2045U-7
Package: SOT-23-3
Stock: In stock
Description: P-Channel 20 V 4.3A 800mW
Quantity :
| Mfr | Diodes Incorporated |
| Device Type | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage | -20 V |
| Gate-Source Voltage | ±8 V |
| Continuous Drain Current | 4.3 A @ 25°C |
| Power Dissipation (PD) | 800 mW @ 25°C |
| Drain-Source On-Resistance | 45 mΩ (Max) @ -4A |
| Drain-Source On-Resistance | 58 mΩ (Max) @ -3.8A |
| Drain-Source On-Resistance | 90 mΩ (Max) @ -3.1A |
| Gate Threshold Voltage | -0.3 V (Min) / -1 V (Max) @ 250 µA |
| Input Capacitance | 634 pF @ -10V |
| Drive Voltage Range | 1.8 V to 4.5 V |
| Operating Temperature | -55°C to +150°C |
| Package | SOT-23-3 |
| Mounting Type | Surface Mount |
| Compliance | RoHS Compliant |
The DMP2045U-7 is a P-channel enhancement-mode power MOSFET manufactured by Diodes Incorporated, featuring a drain-source breakdown voltage of -20V and a continuous drain current rating of -4.3A in a compact SOT-23-3 surface-mount package. This device employs advanced trench technology that delivers excellent RDS(ON) performance with a maximum on-state resistance of just 45mΩ, combined with low gate charge characteristics for efficient high-frequency switching operation. The MOSFET operates with gate drive voltages as low as 1.8V, making it directly compatible with modern low-voltage logic circuits and battery-powered applications. Specified across an operating temperature range of -55°C to +150°C with power dissipation of 800mW at ambient temperature.
The DMP2045U-7 serves diverse power management and switching applications across multiple industries. In portable electronics including smartphones, tablets, and digital cameras, it functions as a high-side load switch for battery power management, enabling selective power distribution to subsystems for energy conservation. Hard disk drives and solid-state storage arrays utilize this MOSFET for power sequencing and spindle motor control where the manufacturer specifically identifies these applications. Battery management circuits employ the device for charge/discharge control, reverse polarity protection, and power path management in rechargeable systems. Additionally, DC-DC converter designs leverage its low RDS(ON) and fast switching characteristics for synchronous rectification and power stage implementation in point-of-load regulation applications where efficiency directly impacts battery life and thermal performance.
FAQ
Q: What is the key advantage of the 1.8V minimum gate drive specification?
A: The ability to operate with gate voltages as low as 1.8V allows direct connection to modern low-voltage logic circuits and single-cell lithium-ion battery systems without requiring level-shifting circuitry or charge pumps, simplifying design and reducing component count in portable applications.
Q: What thermal considerations apply when using this MOSFET near its rated current?
A: At the maximum continuous drain current of 4.3A, the device dissipates approximately 835mW through RDS(ON) losses alone, exceeding the 800mW ambient rating, so designers must ensure adequate PCB copper area for heat spreading or derate the current based on thermal calculations for reliable operation.
Q: What is the key advantage of the 1.8V minimum gate drive specification?
A: The ability to operate with gate voltages as low as 1.8V allows direct connection to modern low-voltage logic circuits and single-cell lithium-ion battery systems without requiring level-shifting circuitry or charge pumps, simplifying design and reducing component count in portable applications.
Q: What thermal considerations apply when using this MOSFET near its rated current?
A: At the maximum continuous drain current of 4.3A, the device dissipates approximately 835mW through RDS(ON) losses alone, exceeding the 800mW ambient rating, so designers must ensure adequate PCB copper area for heat spreading or derate the current based on thermal calculations for reliable operation.
Alternative MOSFET Models
● Vishay SI2319CDS: This P-channel TrenchFET MOSFET offers -40V drain-source voltage with -4.4A current rating and 77mΩ RDS(ON) in the same SOT-23 package, providing higher voltage margin for more demanding applications.
● Alpha & Omega AO3401A: This advanced trench technology P-channel MOSFET delivers -30V voltage rating with -4A continuous current and 1.4W power dissipation in SOT-23, offering excellent efficiency for battery-powered portable device applications.
● onsemi NDT2955: This P-channel power MOSFET provides -60V drain-source voltage with -2.5A current rating and 0.3Ω RDS(ON) in the larger SOT-223 package, delivering superior voltage capability for higher-voltage industrial and automotive systems.
● Vishay SI2323DDS: This compact P-channel MOSFET combines -20V voltage rating with low threshold voltage characteristics in SOT-23 format, providing similar electrical performance with established global supply chain availability for cost-sensitive designs.
● Vishay SI2319CDS: This P-channel TrenchFET MOSFET offers -40V drain-source voltage with -4.4A current rating and 77mΩ RDS(ON) in the same SOT-23 package, providing higher voltage margin for more demanding applications.
● Alpha & Omega AO3401A: This advanced trench technology P-channel MOSFET delivers -30V voltage rating with -4A continuous current and 1.4W power dissipation in SOT-23, offering excellent efficiency for battery-powered portable device applications.
● onsemi NDT2955: This P-channel power MOSFET provides -60V drain-source voltage with -2.5A current rating and 0.3Ω RDS(ON) in the larger SOT-223 package, delivering superior voltage capability for higher-voltage industrial and automotive systems.
● Vishay SI2323DDS: This compact P-channel MOSFET combines -20V voltage rating with low threshold voltage characteristics in SOT-23 format, providing similar electrical performance with established global supply chain availability for cost-sensitive designs.
