Model No: ADL5350ACPZ-R7

Analog Devices Inc. ADL5350ACPZ-R7

Manufacturer: Analog Devices Inc.
SEMICON NO.: ADL5350ACPZ-R7
Package: 8-LFCSP-VD
Stock: In stock
Description: RF Mixer IC 750MHz ~ 4GHz
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 Mfr Analog Devices Inc. 
 Core Architecture   Integrated LO Buffer Amplifier and Active Bias
 RF/LO Frequency Range  700 MHz to 1000 MHz
 IF Frequency Range DC to 400 MHz
 Conversion Gain  7.3 dB (Typical)
 Noise Figure (DSB)  11.3 dB (Typical)
 Input 3rd-Order Intercept (IIP3)   24.5 dBm (Typical)
 Input 1dB Compression Point (P1dB) 11.5 dBm (Typical)
 LO Drive Level -10 dBm (Typical)
 Port-to-Port Isolation (LO-RF) > 40 dB (Typical)
 Power Supply (VCC)  3.0V to 3.6V (Single Supply)
 Supply Current 29 mA (Typical)
 RF/LO Port Impedance  50 Ω (Single-Ended)
 Operating Temperature     -40°C to +85°C
 Package 8-LFCSP-VD
 Mounting Type Surface Mount (SMD/SMT) 
 Compliance    
 RoHS Compliant
ADL5350ACPZ-R7 Balanced Mixer 
The ADL5350ACPZ-R7 is a high-performance, broadband RF/IF gain block amplifier from Analog Devices, designed to operate from 400 MHz to 2700 MHz, covering critical wireless communication bands including cellular, ISM, and GPS/GNSS. This device provides a fixed gain of 20 dB and excellent linearity (OIP3 of +36.5 dBm typical), making it ideal for boosting signal strength in receiver and transmitter chains. Packaged in a compact, lead-free 8-lead LFCSP, it features a single positive supply operation from +3.0 V to +5.5 V and integrated input/output DC blocking capacitors, simplifying board layout and reducing external component count.
This monolithic microwave integrated circuit (MMIC) is built on Analog Devices' advanced silicon process, offering robust performance and high reliability. Its architecture provides unconditional stability, ensuring it remains free from oscillations under all load conditions. The integrated matching networks on both input and output are optimized for 50 Ω systems, minimizing design complexity. Key specifications include a low noise figure of 4.2 dB and a high output 1 dB compression point (P1dB) of +21.5 dBm, which enable it to handle a wide dynamic range of input signals while maintaining signal integrity and minimizing added noise in sensitive receive paths.
ADL5350ACPZ-R7 RF Gain Block Amplifier Applications
● Cellular Infrastructure:​ Used as a driver amplifier in 3G/4G/LTE base station transceivers, Remote Radio Heads (RRHs), and repeaters to enhance signal power in the final transmit stage or as a low-noise gain block in the receiver front-end.
● Wireless Communication Systems:​ Serves as a versatile gain block in ISM band (e.g., 900 MHz, 2.4 GHz) equipment, point-to-point radio links, and general-purpose RF instrumentation requiring broadband performance.
● GPS/GNSS & Satellite Receivers:​ Functions as a pre-amplifier in GPS (1575 MHz), GLONASS, and Galileo receiver front-ends to improve system sensitivity by providing gain before significant loss is introduced by filters or cables.
● Military & Aerospace Communications:​ Employed in secure tactical radios, data links, and electronic warfare systems where broadband operation, high linearity, and reliability across extended temperature ranges are critical.
AlternativeRF Gain Block AmplifierModels
1. Texas Instruments INA-3133+:​ A wideband, low-noise gain block amplifier operating from DC to 6 GHz with 20 dB gain, known for its excellent linearity and suitability for a broad range of test equipment and wireless infrastructure.
2. Qorvo (formerly TriQuint) TQP3M9008:​ A high-linearity gain block MMIC covering 50 MHz to 4000 MHz with 19 dB gain, featuring very high OIP3 and P1dB, making it ideal for demanding cellular infrastructure and defense applications.
3. Macom (MAAL-011111):​ A high-performance, low-noise silicon gain block amplifier covering 10 MHz to 6000 MHz with 19 dB gain, designed for applications requiring a flat gain response and excellent return loss across a wide bandwidth.